| 方形氮化镓自支撑衬底 Free-standing GaN Substrates (Square) | |||
| 尺寸 Size | (10±0.5)×(15±0.5) mm2 Customized Size | ||
| 厚度 Thickness | 400 ± 25 μm | ||
| 晶向Orientation： | C plane (0001) off angle toward M-axis 0.30±0.15° or 0.55 ± 0.15° | ||
| 总厚度变化 TTV | ≤ 10 μm | ||
| 弯曲度 BOW | ≤ 10 μm | ||
| 导电类型 Conduction Type | N-type （Un-doped） | N-type （Silicon-doped） | Semi-Insulating （Carbon-doped） |
| 电阻率Resistivity (300K) | < 0.2 Ω·cm | < 0.02 Ω·cm | ＞109 Ω·cm |
| 镓面粗糙度 Ga face surface roughness | < 0.3 nm (10×10μm) | ||
| 氮面粗糙度 N face surface roughness | Etched （0.5 ~1.5 μm）；Polished（< 0.3nm） | ||
| 位错密度 Dislocation density | <8×105 cm-2 | ||
| (002) 面半峰宽 (002) FWHM | ≤70 arcsec | ||
| (102) 面半峰宽 (102) FWHM | ≤70 arcsec | ||
| 宏观缺陷密度 Macro defect density (hole) | < 0.3 cm-2 | ||
| 可用面积 Useable area | ＞90 % | ||
| 包装 Package | Packaged in individual containers in a class 100 clean room environment. | ||
