| 2英寸氮化镓自支撑衬底 2-inch Free-standing GaN Substrates | |||
| 直径 Dimension | 50.8 ± 0.2 mm | ||
| 厚度 Thickness | 400 ± 25 μm | ||
| 主参考边 Orientation Flat | (1-100) ± 0.1o, 16 ± 1 mm | ||
| 次参考边 Secondary Frientation Flat | (11-20) ± 0.2o, 8 ± 1 mm | ||
| 晶向 Orientation： | C plane (0001) off angle toward M-axis 0.35±0.15° or 0.55 ± 0.15° | ||
| 总厚度变化 TTV | ≤15 μm | ||
| 弯曲度 BOW | ≤20 μm | ||
| 导电类型 Conduction Type | N-type （Un-doped） | N-type （Silicon-doped） | Semi-Insulating （Carbon-doped） |
| 电阻率 Resistivity (300K) | < 0.2 Ω·cm | < 0.02 Ω·cm | ＞109 Ω·cm |
| 载流子浓度 Carrier Concentration | ＜5×1016 cm-3 | 1~2×1018 cm-3 | / |
| 镓面粗糙度 Ga face surface roughness | < 0.3 nm (10×10μm) | ||
| 氮面粗糙度 N face surface roughness | Etched （0.5 ~1.5 μm）；Polished（< 0.3nm） | ||
| 边缘 Edge | Beveled | ||
| 位错密度 Dislocation density | <1×106 cm-2 | ||
| (002) 面半峰宽 (002) FWHM | ≤70 arcsec | ||
| (102) 面半峰宽 (102) FWHM | ≤70 arcsec | ||
| 宏观缺陷密度 Macro defect density (hole) | < 0.3 cm-2 | ||
| 可用面积 Useable area | ＞90 % | ||
| 包装 Package | Packaged in individual containers in a class 100 clean room environment. | ||
