X

Pay attention to WeChat public number for more information

Click elsewhere on the screen to close this window

GaN/ Al2O3 Substrates (2")

Product Overview

GaN/ Al2O3 Substrates (2")

Item

ST-ncY-Φ50

ST-ncZ-Φ50

ST-ncH-Φ50

Size (mm)

Φ50.8±0.5 (2")


Substrate Structure

GaN on Sapphire(0001)

(Standard: SSP Option: DSP)


Thickness (μm)

4.5±0.5; 20±2;

Customized

Conduction Type

Un-doped N-type

N-type

High-doped N-type

Resistivity (Ω·cm

≤0.5

≤0.05

≤0.01

GaN Thickness Uniformity

≤±5% (2")

Dislocation Density (cm-2)

≤5×108

Useable Surface Area

90%

Package

Packaged in a class 100 clean room environment.

63.jpg


Copyright © 2018 Dongguan Sino NitrideSemiconductor Co., Ltd. All Rights Reserved. ICP Number:粤ICP备12004059号-1

Technical:DongDian