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GaN/ Al2O3 Substrates (4")

Product Overview

GaN/ Al2O3 Substrates (4")

Item

ST-ncY-Φ100

ST-ncZ-Φ100

ST-ncH-Φ100

Size (mm)

Φ100.0±0.5 (4")


Substrate Structure

GaN on Sapphire(0001)

(Standard: SSP Option: DSP)


Thickness (μm)

4.5±0.5; 20±2;

Customized


Conduction Type

Un-doped N-type

N-type

High-doped N-type

Resistivity (Ω·cm

≤0.5

≤0.05

≤0.01

GaN Thickness Uniformity

≤±10% (4")

Dislocation Density (cm-2)

≤5×108

Useable Surface Area

90%

Package

Packaged in a class 100 clean room environment.

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