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Free-standing GaN Substrates(Square)

Product Overview

Free-standing GaN SubstratesSquare


Item

SFncAL18

SFncBL18

Size (mm)

(10.0±0.5)×(15.0±0.5);

Customized

Thickness (μm)

330±25

430±25

TTV (μm)

≤10

BOW (μm)

≤10

RMS (nm)

Front surfaceRMS≤0.2 (10μm×10μm)

Back surfaceOptically polished

Orientation

C-axis(0001)±1.0°

Conduction Type

Un-doped N-type

N-type

High-doped N-type

Resistivity (Ω·cm

≤0.5

≤0.05

≤0.01

Dislocation Density (cm-2)

15×106

Useable Surface Area

90%

Package

Packaged in individual containers in a class 100 clean room environment.


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