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Free-standing GaN Substrates(4")

Product Overview

Free-standing GaN Substrates4"

Item

SFncAΦ100

Conduction Type

Un-doped N-type

Size (mm)

φ100.0±1.0

Thickness (μm)

400±50;

Customized

TTV (μm)

≤30

BOW (μm)

≤80


RMS (nm)

Ga face:RMS≤0.2 (10μm×10μm);

N face:Optically polished, Customized

Orientation

C-axis(0001)±1.0°


Package

Packaged in individual containers in a class 100 clean room environment.

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