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Free-standing GaN Substrates (2")

Product Overview

Free-standing GaN Substrates (2")

Item

SF-ncA-Φ50

SF-ncB-Φ50

Size (mm)

Φ50.0±0.5

Thickness (μm)

330±25

430±25

TTV (μm)

≤15

BOW (μm)

≤20

RMS (nm)

Ga face:RMS≤0.2 (10μm×10μm);

N face:Optically polished, Customized

Orientation

C-axis(0001)±1.0°

Conduction Type

Un-doped N-type

N-type

High-doped N-type

Resistivity (Ω·cm)

≤0.5

≤0.05

≤0.01

Dislocation Density (cm-2)

Grade A

Grade B

1~9×105

1~5×106

Useable Surface Area

>90%

Package

Packaged in individual containers in a class 100 clean room environment.


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