Pay attention to WeChat public number for more information

Click elsewhere on the screen to close this window

A method for preparing free-standing substrate from GaN single crystal materials by defect stress removal technique

Source:  Hits:0  Updatetime:2015-02-18 15:00:07  【Print】  【Close

Copyright © 2018 Dongguan Sino NitrideSemiconductor Co., Ltd. All Rights Reserved. ICP Number:粤ICP备12004059号-1

Powered by MetInfo 5.3.19 ©2008-2020  www.metinfo.cn