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  • No.

    Patent No

    Patent Name

    License Announcement Day

  • 1

    200410009840.0

    Large area and low power laser stripping method of epitaxial layer of GaN base

    2009-02-18

  • 2

    200610144316.3

    A method of making free-standing GaN substrate

    2009-06-24

  • 3

    200610167605.5

    The method of making high quality GaN think film on heterogeneous substrates.

    2009-06-24

  • 4

    200810225953.2

    The method of Laser Lift-Off to separate GaN and sapphire substrate without dama..

    2012-01-25

  • 5

    201010617286.X

    A method and devices of hydride vapor phase epitaxy (HVPE) for multiple large su..

    2012-06-13

  • 6

    201010617788.2

    Improved method of Laser Lift-Off which can eliminate residual stress of GaN epi..

    2012-06-13

  • 7

    201120349715.X

    A flange component using multi-pipeline liquid to cool down and control temperat..

    2012-06-13

  • 8

    201120349762.4

    A new filter unit that can be used for online cleaning without disassembly

    2012-06-13

  • 9

    201120355244.3

    A structure connecting quartz tube and metal

    2012-06-13

  • 10

    201010618011.8

    A device and method of annealing

    2012-07-11

  • 11

    201010617807.1

    The method that an independent MO source system can provide MO source to the sem..

    2012-07-18

  • 12

    201220004381.7

    An automatic feeding equipment

    2012-10-10

  • 13

    201110142242.0

    Slit type multi-gas transport nozzle structure

    2012-11-21

  • 14

    201110276973.4

    A mount for the semiconductor epitaxial system

    2013-01-09

  • 15

    201220221883.5

    A control system for vapor phase epitaxy equipment

    2013-02-06

  • 16

    201220320302.3

    A wafer tray

    2013-03-13

  • 17

    201220320305.7

    A device to hit up the gas to high temperature rapidly

    2013-03-13

  • 18

    201110102031.4

    A patterned substrate

    2013-04-10

  • 19

    201220573278.4

    Multi-cavity step processing device for vapor phase epitaxy

    2013-06-19

  • 20

    201010617738.4

    A treatment method for ammonium chloride exhaust and its equipment

    2013-07-24

  • 21

    201010617750.5

    The method of producing patterned substrates of GaN

    2013-08-28

  • 22

    201110453183.9

    A single-contact rotating boat

    2013-10-30

  • 23

    200910136458.9

    An integrated equipment for Laser Lift-Off and cutting

    2014-03-12

  • 24

    201330477184.7

    A kind of frog light

    2014-06-11

  • 25

    201320727092.4

    A safe and efficient wafer jig

    2014-07-10

  • 26

    201210151216.9

    The method of using MOVPE technology to grow high brightness LED with asymmetric..

    2014-08-27

  • 27

    201420457076.2

    A heating device that is easy to be changed and can use mixed ways of heating

    2015-01-21

  • 28

    201420262140.1

    A supporting base for grinding and polishing wafers

    2015-01-28

  • 29

    201210306671.1

    A method for preparing free-standing substrate from GaN single crystal materials..

    2015-02-18

  • 30

    201420562470.2

    A separate supporting base for the epitaxial growth

    2015-02-18

  • 31

    201210319877.8

    A device and method for unloading wafers during high temperature growth

    2015-04-22

  • 32

    201210533750.6

    A method for producing invisible structured substrate

    2015-04-22

  • 33

    201210274906.3

    A laser frog light with safety function keeping the distance between cars

    2015-05-20

  • 34

    201210309119.8

    A boat suitable for GaN epitaxial material industrialization

    2015-05-20

  • 35

    201210559376.7

    A liquid level control device used in high temperature environment

    2015-07-22

  • 36

    201520162543.3

    A GaN-based composite substrate with patterned synchronization during the transf..

    2015-07-29

  • 37

    201520162977.3

    A GaN-based composite substrate with arrayed transfer

    2015-08-19

  • 38

    201520264359.X

    A GaN-based composite substrate containing a diffusion barrier layer

    2015-08-19

  • 39

    201310012395.2

    A square nozzle structure for vapor phase epitaxy of a material

    2015-09-16

  • 40

    201520213249.0

    A new type of MOCVD spray head cleaning brush head

    2015-09-16

  • 41

    201210559395.X

    A simple wafer jig

    2015-10-07

  • 42

    201210303314.X

    Method 2 used to improve the surface temperature field of substrate wafer during..

    2015-11-04

  • 43

    201310318526.X

    A liquid-assisted laser Life-Off method

    2015-11-25

  • 44

    201210068033.0

    A method for preparing and making composite substrate for GaN growth

    2016-01-20

  • 45

    201210559456.2

    A jig with three chuck heads specially used for wafer

    2016-01-27

  • 46

    201210559378.6

    High temperature resistant skid clamping jig used in semiconductor and microelec..

    2016-02-10

  • 47

    201310394554.X

    A hydride gas deposition device and method for improving the thickness distribut..

    2016-02-10

  • 48

    201520798181.7

    A jig for quartz casing installation

    2016-03-02

  • 49

    201410028993.3

    A reactor design and method for vapor phase epitaxy of nitride semiconductor mat..

    2016-04-27

  • 50

    201520962682.4

    An auxiliary jig for large diameter quartz outer sleeve installation

    2018-04-27

  • 51

    201521002074.5

    An installation device for holding a quartz cavity

    2016-04-27

  • 52

    201310012409.0

    A fan shaped nozzle structure for vapor phase epitaxy

    2016-05-11

  • 53

    201310542018.X

    A front drive logistics field control rod

    2016-05-11

  • 54

    201410031343.4

    A reactor for hydride vapor phase epitaxy

    2016-05-18

  • 55

    201210559394.5

    A multi-chuck wafer jig

    2016-06-01

  • 56

    201310601124.0

    A controlled precursor channel

    2016-06-01

  • 57

    201210255792.8

    A composite substrate with a protective layer against metal diffusion

    2016-06-27

  • 58

    201210119613.8

    A method for preparing and making patterned sapphire substrate for GaN growth

    2016-06-29

  • 59

    200910136457.4

    Solid-state laser stripping equipment and stripping methods

    2018-06-29

  • 60

    201410398217.2

    A device for stabilizing conversion rate

    2016-08-24

  • 61

    201410196612.2

    A dual channel nozzle structure with uniformly distributed controllable reactant..

    2016-09-28

  • 62

    201620797442.8

    A device for improving the efficiency of converting hydrogen chloride into GaN

    2017-01-18

  • 63

    201410004051.1

    A new type of patterned substrate and its preparation method

    2017-02-08

  • 64

    201720349115

    A hydride vapor phase epitaxial graphite boat structure

    2017-12-29

  • 65

    201510656861.X

    A linkage adjustable heat insulation device and its application method

    2018-01-09

  • 66

    201610017711.9

    A single crystal growth apparatus and method for nitrogen compounds

    2018-01-23

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