Size (mm)

Φ100.0±0.5 (4")

Substrate Structure

GaN on Sapphire(0001)

(Standard: SSP Option: DSP)

Thickness (μm)

4.5±0.5; 20±2;

Customized

Conduction Type

Un-doped N-type

N-type

High-doped N-type

Resistivity (Ω·cm）

≤0.5

≤0.05

≤0.01

GaN Thickness Uniformity

≤±10% (4")

Dislocation Density (cm^-2)

≤5×10⁸

Useable Surface Area

＞90%

Package

Packaged in a class 100 clean room environment.