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GaN/ Al2O3 Substrates (6")

产品概述

Item

ST-ncY-Φ150

ST-ncZ-Φ150

ST-ncH-Φ150

Size (mm)

Φ150.0±1.0 (6")


Substrate Structure

GaN on Sapphire(0001)

(Standard: SSP Option: DSP)


Thickness (μm)

4.5±0.5; 20±2;

Customized


Conduction Type

Un-doped N-type

N-type

High-doped N-type


Resistivity (Ω·cm

≤0.5

≤0.05

≤0.01

GaN Thickness Uniformity

≤±15% (6")

Dislocation Density(cm-2)

≤5×108

Useable Surface Area

90%

Package

Packaged in a class 100 clean room environment.

GaN/ Al2O3 Substrates (6")(图1)

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