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GaN/ Al2O3 Substrates (2")

产品概述

Item

ST-ncY-Φ50

ST-ncZ-Φ50

ST-ncH-Φ50

Size (mm)

Φ50.8±0.5 (2")


Substrate Structure

GaN on Sapphire(0001)

(Standard: SSP Option: DSP)


Thickness (μm)

4.5±0.5; 20±2;

Customized

Conduction Type

Un-doped N-type

N-type

High-doped N-type

Resistivity (Ω·cm

≤0.5

≤0.05

≤0.01

GaN Thickness Uniformity

≤±5% (2")

Dislocation Density (cm-2)

≤5×108

Useable Surface Area

90%

Package

Packaged in a class 100 clean room environment.

GaN/ Al2O3 Substrates (2")(图1)

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