| 6英寸硅基氮化镓外延片 6-inch GaN on Silicon Dmode HEMT Epiwafer | ||
| 外延结构Layer Name | 厚度Thickness | 备注Notes |
| Cap-GaN | 3nm | |
| Barrier AlGaN | 20-30nm | Al%：20-27% |
| AlN | 1nm | |
| UGaN | 200nm | |
| CGaN | 1500nm | |
| Buffer AlGaN | 3200nm | Al%：10-70% |
| Buffer AlN | 250nm | |
| Substrate Si(Notch、Flat) | 1000μm | 150 mm Si (111) |
| 参数名称Item | 参数标准 Specifications | |
| Epi thickness | 5.2±0.5 | μm |
| Edge crack | <3 | mm |
| Bow | <±30 | μm |
| GaN XRD FWHM(002) | <700 | arcsec |
| GaN XRD FWHM(102) | <800 | arcsec |
| 2DEG mobility | >1800 | cm2/V·s |
| 2DEG concentration | >8E12 | cm-2 |
| Sheet resistance | <400 | Ω |
