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    2018

  • 01

    January 2018,a group of visitors headed by Ye Baohua and Liu Jintang, the director and deputy director of Dongguan Economy and Information Technology Bureau visited Dongguan Sino Nitride Semiconductor Co., Ltd. Accompanied by Yuan Liqun, the secretary of the Party committee of Qishi Town and Xiong Shiquan, the mayor of Qishi Town, the visitors conducted researches in the company.

  • 03

    March 2018,a group of visitors headed by Huang Shaowen, a member of the Standing Committee of the Municipal Party Committee of Dongguan visited Dongguan Sino Nitride Semiconductor Co., Ltd and conducted researches in the company.

  • 2017

  • 04

    April 2017,Dongguan Sino Nitride Semiconductor Co., Ltd was awarded the title of “Top 30 Enterprises of LED Technological Innovation in China”.

  • 08

    August 2017,Dongguan Sino Nitride Semiconductor Co., Ltd was included in the key enterprises of intellectual property protection in Dongguan.

  • 09

    September 2017,Dongguan Sino Nitride Semiconductor Co., Ltd was specified as “2017 Semiconductor Materials and Devices Engineering Technology Research Center in Guangdong province”.

  • 10

    October 2017,Dongguan Sino Nitride Semiconductor Co., Ltd achieved major breakthrough in GaN single crystal substrate.

  • 11

    November 2017,the National Standards “GaN Laser Lift-Off(LLO) Equipment” and the “Hydride vapor phase epitaxy apparatus for preparing nitride semiconductor material” mainly drafted by Dongguan Sino Nitride Semiconductor Co., Ltd were approved by the committee members and submitted to higher authority for approval.

  • 11

    November 2017,Dongguan Sino Nitride Semiconductor Co., Ltd was awarded the “Outstanding Contribution Prize” for the year of 2017 issued by the National Technological Committee for Standardization of Semiconductor Equipment and Material.

  • 2016

  • 01

    January 2016,Gan Zizhao, the honorary chairman of board of directors of Dongguan Sino Nitride Semiconductor Co., Ltd and Academician of Chinese Academy of Sciences was awarded the “Honorary Citizen of Dongguan".

  • 01

    January 2016,Dongguan Sino Nitride Semiconductor Co., Ltd was specified as “2015 Guangdong Innovative Enterprises (Experimental unit) by the High-Tech Enterprises Association of Guangdong.

  • 03

    March 2016,a group of visitors headed by Bai Tao, a member of the Standing Committee of the Municipal Party Committee and the head of the Organization Department of Municipal Party Committee visited Dongguan Sino Nitride Semiconductor Co., Ltd. Accompanied by Chen Fukun, the chairman of People’s Congress of the town and relevant personnel from party and government administration office and organization office, the group conducted researches in the company.

  • 07

    July 2016,Zhang Guoyi, the general manager of Dongguan Sino Nitride Semiconductor Co., Ltd was awarded the prize of “Honorary Mayor Award---Enterprise Technical Leader”.

  • 07

    July 2016,the project of Dongguan Sino Nitride Semiconductor Co., Ltd “Key Technology of Patterned Sapphire Substrate for Semiconductor Lighting and Its Industrialization” was awarded the “Second Prize for Scientific and Technological Progress of Dongguan”.

  • 09

    September 2016,the ceremony of unveiling the nameplate of the South Base of China’s third generation of semiconductor industry which was established with the participation of Dongguan Sino Nitride Semiconductor Co., Ltd was witnessed by Cao Jianlin, the former deputy minister of the Ministry of Science and Technology and the chairman of National Decision Committee of Third Generation of Semiconductor Industry, and Yuan Baocheng, the deputy stadholder of Guangdong province.

  • 2015

  • 04

    April 2015,Liu Peng, an employee of the Department of HVPE Equipment Research and Development was awarded the honorary title of “National Model Worker” and was granted a meeting with the leaders of the party and the country.

  • 10

    October 2015,Dongguan Sino Nitride Semiconductor Co., Ltd was awarded the title of “Model Enterprise of Intellectual Property of Guangdong Province” by the Intellectual Property Office of Guangdong Province.

  • 10

    October 2015,Dongguan Sino Nitride Semiconductor Co., Ltd was specified as the “International Technological Cooperation Base of the Nation” by the Ministry of Science and Technology.

  • 2014

  • 03

    March 23rd 2014,Hu Chunhua, the secretary of Provincial Party Committee paid a visit to Dongguan Sino Nitride Semiconductor Co., Ltd, a subsidiary company of Guangda Group, and conducted special researches.

  • 04

    April 24th and 25th 2014,Dongguan Sino Nitride Semiconductor Co., Ltd hosted the seminar of 5 National Standards including “Laser Lift-Off(LLO) Equipment” and etc.

  • 2013

  • 01

    January 2013,Dongguan Sino Nitride Semiconductor Co., Ltd was awarded the title of “2012 Advanced Enterprise of Association for Science and Technology System of Dongguan”.

  • 01

    January 2013,the patterned sapphire substrate (PSS) and GaN/sapphire composite substrate of Dongguan Sino Nitride Semiconductor Co., Ltd were acknowledged as key new products of Guangdong.

  • 04

    April 2013,Dongguan Sino Nitride Semiconductor Co., Ltd was awarded the title “The Most Promising Innovative Enterprise” by The Economic Daily.

  • 07

    July 18th 2013,the “San Zhong” projects construction inspection team headed by Zhang Ke, the deputy mayor of Dongguan visited Dongguan Sino Nitride Semiconductor Co., Ltd and conducted inspection.

  • 12

    December 4th 2013,the National Standards mainly drafted by Dongguan Sino Nitride Semiconductor Co., Ltd was approved.

  • 2012

  • 10

    October 17th 2012,the national inspection team and welcoming and accompanying personnel from the provincial, municipal and town authorities headed by Guo Xiangyuan, a member of Party group of the Ministry of Science and Technology and leader of the discipline inspection group of the Central Commission for Discipline Inspection stationed at the Ministry of Science and Technology visited Dongguan Sino Nitride Semiconductor Co., Ltd and inspected the implementation of the national science and technology plans project undertaken by Dongguan Sino Nitride Semiconductor Co., Ltd and gave instructions.

  • 11

    November 1st 2012,in the Dongguan international science and technology cooperation week, Dongguan Sino Nitride Semiconductor Co., Ltd, the Dongguan Institute of Opto-Electronics Peking University and the Ferdinand-Braun-Institute Germany signed cooperation agreement; the three parties will cooperate in the field of semiconductor laser unit.

  • 12

    In the second half of 2012,Dongguan Sino Nitride Semiconductor Co., Ltd participated in the preparatory work of optical component of Guangdong province organized by the Department of Science and Technology of Guangdong Province.

  • 03

    March 2012,Dongguan Sino Nitride Semiconductor Co., Ltd undertook the compiling work of the National Standard “GaN Substrate and Epitaxial Wafer”.

  • 03

    March 19th 2012,a group of visitors headed by Ye Jingtu, the deputy director general of The Department of Science and Technology of Guangdong Province visited Dongguan Sino Nitride Semiconductor Co., Ltd. Accompanied by Wu Meiliang, the deputy director of Dongguan Science and Technology Bureau, the visitors conducted researches in the company.

  • 04

    April 23rd 2012,a group of visitors headed by the institute director of Ferdinand-Braun-Institute (FBH), Germany visited Dongguan Sino Nitride Semiconductor Co., Ltd.

  • 05

    May 19th 2012,Wu Chengbiao, the head of the Organization Department of the People’s Government of Zhuji City of Zhejiang province visited Dongguan Sino Nitride Semiconductor Co., Ltd.

  • 06

    June 2012,the PCT international invention patent “The method of stripping GaN and sapphire substrate without damage by using solid laser” of Dongguan Sino Nitride Semiconductor Co., Ltd was authorized by the Korean Intellectual Property Office.

  • 06

    June 6th 2012,Yu Lijun, the deputy mayor of Dongguan visited Dongguan Sino Nitride Semiconductor Co., Ltd.

  • 07

    July 25th 2012,a group of visitors headed by Mao Zhongying, the counselor of Department of International Cooperation of the Ministry of Science and Technology visited Dongguan Sino Nitride Semiconductor Co., Ltd and conducted researches.

  • 08

    August 7th 2012,Liang Bing, the director of Dongguan Social Security Department visited Dongguan Sino Nitride Semiconductor Co., Ltd and conducted researches.

  • 08

    August 21st 2012,the seminar of National Standard “GaN Substrate and Epitaxial Wafer” hosted by Dongguan Sino Nitride Semiconductor Co., Ltd was held successfully.

  • 08

    August 2012,Dongguan Sino Nitride Semiconductor Co., Ltd undertook the compiling work of local standard project “LED Substrate Testing Technical Specifications” of LED lighting industry of Guangdong province.

  • 09

    September 11th 2012,Liang Jingchang, the deputy director of Dongguan Economy and Information Technology Bureau visited Dongguan Sino Nitride Semiconductor Co., Ltd.

  • 09

    September 23rd 2012,the “International Development and Strategy Seminar for Nitride Semiconductor Substrate and Epitaxial Chips” hosted by Dongguan Sino Nitride Semiconductor Co., Ltd was held successfully.

  • 09

    September 23rd 2012,as the result of the expert’s argumentation organized by Department of Science and Technology of Guangdong Province, the scheme of establishment of engineering technology development center for semiconductor lighting substrate materials was approved.

  • 01

    January 5th 2012,Dongguan Sino Nitride Semiconductor Co., Ltd was awarded the title of “Dongguan Patents Breeding Enterprise”.

  • 01

    January 2012,Dongguan Sino Nitride Semiconductor Co., Ltd was awarded the honor of “2011 Top 10 Developing Enterprises of Dongguan”.

  • 02

    February 2012,the patterned sapphire substrate(PSS) and Laser Lift-Off(LLO) equipment of Dongguan Sino Nitride Semiconductor Co., Ltd were rated as “High-Tech Products of Guangdong Province”.

  • 03

    March 31st 2012,a group of visitors headed by Cheng Hongbo, the deputy mayor of Dongguan and Shen Haiyi, the deputy director of Dongguan Science and Technology Bureau visited Dongguan Sino Nitride Semiconductor Co., Ltd. Accompanied by Chen Fukun, the Secretary of the Party Committee of Qishi Town and Deng Hui, the Mayor of Qishi Town, the group conducted researches in the company.

  • 03

    March 2012,Dongguan Sino Nitride Semiconductor Co., Ltd was awarded the title of “The Leading Enterprise with Reputable Brand and Quality in China”.

  • 2011

  • 05

    May 2011,Dongguan Sino Nitride Semiconductor Co., Ltd, completed the phase two of the production expansion of patterned sapphire substrate(PSS) production line; the company was developing toward large-scale enterprise production.

  • 10

    October 2011,approved by the Department of Science and Technology of Guangdong Province, the Guangdong Academicians Workstation was established at Dongguan Sino Nitride Semiconductor Co., Ltd.

  • 2010

  • 12

    December 2010,the Beijing R&D center of Dongguan Sino Nitride Semiconductor Co., Ltd was officially established in Changping Campus of Peking University (Beijing Yanyuan Sino Nitride Semiconductor Engineering Research Center).

  • 12

    December 2010,the first Laser Lift-Off(LLO) equipment was exported to the USA successfully and gained excellent appraisal.

  • 05

    May 2010,the first GaN substrate production line was established to start the industrialization of domestic GaN substrate.

  • 06

    June 2010,the first innovative scientific research team of Research Center for Wide Bandgap Semiconductor of PKU headed by Gan Zizhao Academician was introduced to Dongguan Sino Nitride Semiconductor Co., Ltd.

  • 06

    June 2010,Huang Huahua, the former stadholder of Guangdong province visited Dongguan Sino Nitride Semiconductor Co., Ltd and listened to the work report given by innovative scientific research team. High appraisal was given to the company.

  • 08

    August 2010,Dongguan Sino Nitride Semiconductor Co., Ltd Training school was established in conjunction with the Research Center for Wide Bandgap Semiconductor of PKU for the purpose of training internal employees.

  • 10

    October 2010,Post-Doctoral scientific research workstation was established with the approval of the Ministry of Human Resources and Social Security of the People’s Republic of China.

  • 11

    November 2010,Dongguan Sino Nitride Semiconductor Co., Ltd was specified as Guangdong international Scientific Research Cooperation Base by the Department of Science and Technology of Guangdong Province.

  • 2009

  • 01

    January 12th 2009,Dongguan Sino Nitride Semiconductor Co., Ltd was officially registered and established in the key city of China’s semiconductor industry, Dongguan.

  • 03

    March 2009,Leng Xiaoming, the deputy mayor of Dongguan, and Mai Guangqin, the secretary of the Party’s Committee of Qishi Town, visited the factory building of Dongguan Sino Nitride Semiconductor Co., Ltd to inspect the progress of the factory building with high attention. In the same month, the company signed technical cooperation agreement with the Research Center for Wide Bandgap Semiconductor of PKU for worldwide joint development.

  • 03

    March 2009,Dongguan Sino Nitride Semiconductor Co., Ltd established its Beijing R & D center with an area of more than 1,000 square meters.

  • 04

    April 2009,Dongguan Sino Nitride Semiconductor Co., Ltd was awarded the title of “Dongguan Private Science and Technology Enterprise”. In the same month, Dongguan Sino Nitride Semiconductor Co., Ltd took over 4 national invention patents from Peking University and officially started to own proprietary intellectual property rights in key technological fields.

  • 05

    May 2009,the first product of Dongguan Sino Nitride Semiconductor Co., Ltd, Micro Area Laser Lift-Off(LLO) Equipment, was launched; this also represented the birth of the first Pure Solid Micro Area Laser Lift-Off(LLO) Equipment in the world.

  • 12

    December 2009,the first production line of patterned sapphire substrate(PSS) was established and started to operate.

  • 2008

  • 05

    In mid-2008,Guangdong Guangda Group and Peking University started to negotiate on this project as investors. This is the first industrialized project for semiconductor GaN substrate materials in China.

  • 11

    November 2008,Guangdong Guangda Group and Peking University officially signed cooperation agreement in Dongguan, Guangdong province. In the same year, the preparatory team of Dongguan Sino Nitride Semiconductor Co., Ltd signed the “Investment Support Agreement” with the local government. The local government provided a series of strong support such as land and etc. and factory building with an area of more than 17,000 square meters.

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